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Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
V GS = 15V
10V
Figure 2. Transfer Characteristics
500
100
8V
150 C
6V
5V
100
o
25 C
-55 C
10
10
o
o
2. T C = 25 C
1
0.1
*Notes:
1. 250 μ s Pulse Test
o
1 10
30
1
2
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
4 6
8
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
140
120
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
150 C
o
100
25 C
80
60
V GS = 10V
V GS = 20V
10
o
*Notes:
*Note: T C = 25 C
40
0
40 80 120
o
160
1
0.4
1. V GS = 0V
2. 250 μ s Pulse Test
0.6 0.8 1.0 1.2
1.4
10
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
5
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
10
4
C oss
8
V DS = 120V
V DS = 300V
10
3
C iss
C rss
6
V DS = 480V
10
2
10
*Note:
1. V GS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
4
2
Crss = Cgd
1
0.1
1 10 100
600
0
0
20
*Note: I D = 23.5A
40 60 80 100 120
140
V DS , Drain-Source Voltage [V]
Q g , Total Gate Charge [nC]
?2011 Fairchild Semiconductor Corporation
FCH47N60NF Rev. C2
3
www.fairchildsemi.com
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